Effects of capping layer material and recrystallization conditions on the characteristics of silicon‐on‐insulator metal‐oxide‐semiconductor transistors in laser‐recrystallized silicon films-Reference-Cited by-同舟云学术

Effects of capping layer material and recrystallization conditions on the characteristics of silicon‐on‐insulator metal‐oxide‐semiconductor transistors in laser‐recrystallized silicon films

Published:1989-07-15 Issue:2 Volume:66 Page:900-909
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wouters D. J.,Maes H. E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.343518

Reference21 articles.

1. Growth of large areas of grain boundary-free silicon-on-insulator

2. Surface Stabilization of Polycrystalline‐Silicon Films during Laser Recrystallization

3. Effects of various encapsulating films on laser recrystallization of silicon on SiO2

4. A semiempirical model for the laser‐induced molten zone in the laser recrystallization process

5. Device fabrication in {100} silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique

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