Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2735672
Reference19 articles.
1. Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications
2. Ultrathin body sige-on-insulator pmosfets with high-mobility sige surface channels
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