Room temperature electrical spin injection from a new spin gapless ferromagnetic semiconducting inverse Heusler alloy Mn2CoSi into p-Si via SiO2 tunnel barrier-Reference-Cited by-同舟云学术

Room temperature electrical spin injection from a new spin gapless ferromagnetic semiconducting inverse Heusler alloy Mn2CoSi into p-Si via SiO2 tunnel barrier

Published:2019-05-07 Issue:17 Volume:125 Page:173903
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Maji Nilay¹,Nath T. K.¹

Affiliation:

1. Department of Physics, Indian Institute of Technology Kharagpur, West Bengal 721302, India

Funder

Indian Institute of Technology Kharagpur

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5079975

Reference53 articles.

1. Quaternary half-metallic Heusler ferromagnets for spintronics applications

2. New quarternary half metallic material CoFeMnSi

3. Transition from ferro- to ferrimagnetic ordering via Mn-disorder in (Ni,Co)MnGa quaternary Heusler alloy

4. Quaternary Heusler compounds Co2−xRhxMnZ (Z = Ga, Sn, Sb): crystal structure, electronic structure, and magnetic properties

5. Ab initiodesign of half-metallic fully compensated ferrimagnets: The case ofCr2MnZ(Z=P, As, Sb, and Bi)

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