Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection
Author:
Affiliation:
1. Advanced Devices Technology Center, Corporate Research and Development, Asahi Kasei 1 , Fuji, Shizuoka 416-8501, Japan
2. UVC Project, Asahi Kasei 2 , Chiyoda, Tokyo 100-0006, Japan
Abstract
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0139970/16773629/101103_1_online.pdf
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