Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1537451
Reference17 articles.
1. Selective Doping of 6H-SiC by Diffusion of Boron
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3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
4. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties
5. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes
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