The improved polarization retention through high-field charge injection in highly strained BiFeO3 thin films with preferred domain orientations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3697989
Reference19 articles.
1. Fatigue-free ferroelectric capacitors with platinum electrodes
2. Depolarizing-field-mediated 180° switching in ferroelectric thin films with 90° domains
3. Domain nucleation and relaxation kinetics in ferroelectric thin films
4. Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films
5. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
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1. Reversible charge injection in artificially created charged domain wall region;Scripta Materialia;2024-06
2. Reversible charge injection-controlled resistance switching in BiFeO3 ferrodiodes;Applied Physics Letters;2023-10-30
3. Improved polarization retention in epitaxial BiFeO3 thin films induced by strain relaxation;Applied Surface Science;2023-10
4. Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching;ACS Nano;2023-06-26
5. Controllable Distribution and Reversible Migration of Charges in BiFeO3-Based Films on Si Substrates;ACS Applied Materials & Interfaces;2021-09-01
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