GaAs light‐emitting diodes withn‐i‐p‐iactive layers fabricated by selective contact diffusion
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100419
Reference7 articles.
1. Photoluminescence in GaAs doping superlattices
2. Tunable electroluminescence from GaAs doping superlattices
3. Highly tunable and efficient room‐temperature electroluminescence from GaAs doping superlattices
4. Insitugrown‐in selective contacts ton‐i‐p‐idoping superlattice crystals using molecular beam epitaxial growth through a shadow mask
5. Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built‐in shadow mask
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Particle irradiation of doping superlattices: An optical investigation;Journal of Applied Physics;2000-09
2. Low-voltage high-contrast n-i-p-i-based waveguide modulators with alloyed selective contacts;IEEE Photonics Technology Letters;1996-10
3. Design and measurement of an MQW nipi waveguide modulator for optoelectronic integrated circuits;IEEE Journal of Quantum Electronics;1996-06
4. Metalorganic vapor phase epitaxial growth, characterization and annealing experiments on InP doping superlattices;Journal of Electronic Materials;1990-08
5. Doping superlattices based on InSb for mid‐infrared detector applications;Applied Physics Letters;1990-01-08
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