Strained Pt Schottky diodes on n-type Si and Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2191831
Reference15 articles.
1. Mobility-enhancement technologies
2. High-Speed Schottky-Barrier pMOSFET With<tex>$f_T = 280 hbox GHz$</tex>
3. Performance enhancement of ring oscillators and transimpedance amplifiers by package strain
4. Abnormal hole mobility of biaxial strained Si
5. Pt/p-strained-Si Schottky diode characteristics at low temperature
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