Growth of CdTe by organometallic vapor phase epitaxy in an impinging jet reactor-Reference-Cited by-同舟云学术

Growth of CdTe by organometallic vapor phase epitaxy in an impinging jet reactor

Published:1990-03-19 Issue:12 Volume:56 Page:1166-1168
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Snyder D. W.,Ko E. I.,Sides P. J.,Mahajan S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102551

Reference12 articles.

1. A new MOVPE technique for the growth of highly uniform CMT

2. Metal–organic chemical vapor deposition hybrid substrates for HgCdTe

3. Organometallic growth of II–VI compounds

4. High quality epitaxial films of CdTe on sapphire

5. The growth of CdTe/GaAs heteroepitaxial films by metal–organic chemical vapor deposition

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