Observation of ZnSe/GaAs interface states by reflectance difference spectroscopy-Reference-Cited by-同舟云学术

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Observation of ZnSe/GaAs interface states by reflectance difference spectroscopy

Published:1995-04-24 Issue:17 Volume:66 Page:2235-2237
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Z.,Wong G. K.,Sou I. K.,Yeung Y. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113177

Reference12 articles.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of Interfacial States by Using Photocurrent Difference Spectroscopy for ZnSe/GaAs Heterostructures;Journal of the Korean Physical Society;2008-10-15

2. Temporal evolution of relaxation in rubbed polystyrene thin films;Physical Review E;2001-05-24

3. Rubbing-induced molecular alignment and its relaxation in polystyrene thin films;Journal of Polymer Science Part B: Polymer Physics;2001

4. Observation of in-plane optical anisotropy of spin-cast rigid-rod electroluminescent polymer films;Applied Physics Letters;2000-03-13

5. ZnSe/GaAs interface state probed by time-resolved reflectance difference spectroscopy;Applied Physics Letters;1999-06-14

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