N doped ZnO (N:ZnO) film prepared by reactive HiPIMS deposition technique
Author:
Affiliation:
1. Lab of Plasma Physics and Materials, Beijing Institute of Graphic Communication, Beijing 102600, China
2. School of Physics, Beijing Institute of Technology, Beijing 100081, China
Funder
Beijing Municipal National Science Foundation
Collaboration Innovation Center of Green Printing and Publishing Technology
Natural Science Foundation of Beijing Municipal Education Commission
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5132620
Reference53 articles.
1. Band gaps, crystal-field splitting, spin-orbit coupling, and exciton binding energies in ZnO under hydrostatic pressure
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5. Efficient three-dimensional nanostructured photoelectric device by Al-ZnO coating on lithography-free patterned Si nanopillars
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