Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells-Reference-Cited by-同舟云学术

Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells

Published:2000-06-15 Issue:12 Volume:87 Page:8778-8785
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee Chang Hyun,Jeon Jin Wan,Lim Koeng Su

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373610

Reference17 articles.

1. Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method

2. A novel structure, high conversion efficiency p‐SiC/graded p‐SiC/i‐Si/n‐Si/metal substrate‐type amorphous silicon solar cell

3. Amorphous siliconp‐i‐nsolar cells with graded interface

4. Use of a carbon‐alloyed graded‐band‐gap layer at thep/iinterface to improve the photocharacteristics of amorphous silicon alloyedp‐i‐nsolar cells prepared by photochemical vapor deposition

5. Performance dependence of a-Si/a-Si double junction solar cell on the quality of the a-Si:C:H buffer layer at p+-Si:C:H/i-a-Si:H interface

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