Stress originating from nanovoids in hydrogenated amorphous semiconductors-Reference-Cited by-同舟云学术

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Stress originating from nanovoids in hydrogenated amorphous semiconductors

Published:2017-03-07 Issue:9 Volume:121 Page:095307
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Zumin¹²,Flötotto David²,Mittemeijer Eric J.²³

Affiliation:

1. School of Materials Science and Engineering, Tianjin University, 300350 Tianjin, China

2. Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstrasse 3, D-70569 Stuttgart, Germany

3. Institute for Materials Science, University of Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart, Germany

Funder

Thousand Talents Program for Distinguished Young Scholars of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977853

Reference27 articles.

1. Hydrogenated Amorphous Silicon

2. Photovoltaic Technology: The Case for Thin-Film Solar Cells

3. Amorphous Hydrogenated Silicon, a-Si:H

4. Dangling-bond defects and hydrogen passivation in germanium

5. Dielectric function ofa-Si:H based on local network structures

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1. Detailed review on c-Si/a-Si:H heterojunction solar cells in perspective of experimental and simulation;Microelectronic Engineering;2022-09

2. Control of the formation of self-assembled nano-voids at the GaN/GaAs interface;Applied Physics Express;2021-07-30

3. Stress in physical vapor deposited thin films: Measurement methods and selected examples;Handbook of Modern Coating Technologies;2021

4. Effects of hydrogen on structure and crystallization behavior of sputter-deposited amorphous germanium films;Japanese Journal of Applied Physics;2020-07-01

5. Role of Hydrogen Flow Rate on Microstructure of a-Si:H(n) Films: Spectroscopic Ellipsometry Studies;Journal of Electronic Materials;2019-01-31

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