Effect of hydrogen incorporation temperature inin plane-engineered GaAsN∕GaAsN:H heterostructures-Reference-Cited by-同舟云学术

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Effect of hydrogen incorporation temperature inin plane-engineered GaAsN∕GaAsN:H heterostructures

Published:2008-06-02 Issue:22 Volume:92 Page:221901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Trotta R.,Polimeni A.,Capizzi M.,Giubertoni D.,Bersani M.,Bisognin G.,Berti M.,Rubini S.,Martelli F.,Mariucci L.,Francardi M.,Gerardino A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2939000

Reference22 articles.

1. Vibrational spectroscopy of hydrogenatedGaAs1−yNy: A structure-sensitive test of anH2*(N)model

2. Nitrogen-hydrogen complex inGaAsxN1−xrevealed by x-ray absorption spectroscopy

3. Effect of hydrogen on the electronic properties ofInxGa1−xAs1−yNy/GaAsquantum wells

4. Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells

5. Nitrogen passivation induced by atomic hydrogen: TheGaP1−yNycase

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1. Micro-Raman Mapping of the Strain Field in GaAsN/GaAsN:H Planar Heterostructures: A Brief Review and Recent Evolution;Applied Sciences;2019-11-13

2. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01

3. Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN;Applied Physics Letters;2015-02-02

4. An all optical mapping of the strain field in GaAsN/GaAsN:H wires;Applied Physics Letters;2012-11-05

5. Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties;Advanced Functional Materials;2012-03-16

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