Liquid‐phase epitaxial growth and characterization of low carrier concentrationn‐ andp‐type In0.53Ga0.47As
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335517
Reference21 articles.
1. Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm
2. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
3. High purity InP and InGaAsP grown by liquid phase epitaxy
4. LPE growth of high purity InP and In1−xGaxP1−yAsy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Methods for magnetotransport characterization of IR detector materials;Semiconductor Science and Technology;1993-06-01
2. High‐temperature hole mobility in strained quantum wells;Applied Physics Letters;1991-12-02
3. LPE growth of InGaAsP:InP high purity layers using rare earth elements;Bulletin of Materials Science;1990-03
4. Ge doping of liquid phase epitaxial In0.53Ga0.47As;Journal of Crystal Growth;1989-01
5. Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy;Thin Solid Films;1988-09
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