Transport and persistent photoconductivity in InGaAs/InP single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97324
Reference12 articles.
1. Two‐dimensional electron gas in a selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy
2. Transport properties and persistent photoconductivity in InP/In0.53Ga0.47As modulation‐doped heterojunctions
3. Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures
4. High magnetic field studies of the two‐dimensional electron gas in GaInAs‐InP superlattices
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3. Transient decay of photoinduced current in semiconductors and heterostructures;Journal of Physics D: Applied Physics;2019-10-24
4. Transport properties of a spin-split two-dimensional electron gas in an In0.53Ga0.47As∕InP quantum well structure;Journal of Applied Physics;2009-10
5. Roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells;Physical Review B;2003-11-21
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