Hole-doped M4SiTe4 (M = Ta, Nb) as an efficient p-type thermoelectric material for low-temperature applications
Author:
Affiliation:
1. Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
Funder
Inamori Foundation
Asahi Glass Foundation
Japan Society for the Promotion of Science
Research Foundation for the Electrotechnology of Chubu
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5109590
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