Reduced electrical impedance of SiO2, deposited through focused ion beam based systems, due to impurity percolation-Reference-Cited by-同舟云学术

Reduced electrical impedance of SiO2, deposited through focused ion beam based systems, due to impurity percolation

Published:2014-11-28 Issue:20 Volume:116 Page:204301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Faraby H.¹,DiBattista M.²,Bandaru P. R.³

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA

2. Qualcomm Technologies, Qualcomm Inc., San Diego, California 92121, USA

3. Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093, USA

Funder

National Science Foundation (NSF)

Qualcomm

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902521

Reference29 articles.

1. M. Abramo , E. Adams , M. Gibson , L. Hahn , and A. Doyle , in Proceedings of the 35th Annual IEEE International Reliability Physics Symposium (1997), p. 66.

2. Improving the Yield and Turn-Around Time of Focused Ion Beam Microsurgery of Integrated Circuits by LCVD Method

3. Metal-insulator transition in Pt-C nanowires grown by focused-ion-beam-induced deposition

4. Novel electrical switching behaviour and logic in carbon nanotube Y-junctions

5. Rapid Prototyping of Site-Specific Nanocontacts by Electron and Ion Beam Assisted Direct-Write Nanolithography

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