In-situ transmission electron microscopy study of oxygen vacancy ordering and dislocation annihilation in undoped and Sm-doped CeO2 ceramics during redox processes-Reference-Cited by-同舟云学术

In-situ transmission electron microscopy study of oxygen vacancy ordering and dislocation annihilation in undoped and Sm-doped CeO2 ceramics during redox processes

Published:2016-12-07 Issue:21 Volume:120 Page:214302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ding Yong¹^ORCID,Chen Yu¹,Pradel Ken C.¹,Liu Meilin¹,Lin Wang Zhong¹

Affiliation:

1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971338

Reference39 articles.

1. Physical, chemical and electrochemical properties of pure and doped ceria

2. Physical Properties of Mixed Conductor Solid Oxide Fuel Cell Anodes of Doped CeO2

3. Suppression of Electronic Conductivity of CeO[sub 2]-Based Electrolytes by Electron Traps

4. Ce0.8Sm0.2O1.9: characterization of electronic charge carriers and application in limiting current oxygen sensors

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