Reverse Characteristics of High Inverse Voltage Point Contact Germanium Rectifiers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1721126
Reference11 articles.
1. High Inverse Voltage Germanium Rectifiers
2. Physical Principles Involved in Transistor Action
3. D.C. Characteristics of Silicon and Germanium Point Contact Crystal Rectifiers. Part II. The Multicontact Theory
4. Zur quantitativen Durchführung der Raumladungs- und Randschichttheorie der Kristallgleichrichter
5. Theory of Relation between Hole Concentration and Characteristics of Germanium Point Contacts
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2. Inversion layer at the interface of Schottky diodes;Solid-State Electronics;1974-08
3. Quantum yield of metal‐semiconductor photodiodes;Journal of Applied Physics;1972-10
4. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972
5. An introduction to the generalized field theory II. Forward conduction in Schottky diodes †;International Journal of Electronics;1970-12
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