Comparison of the layered semiconductors GaSe, GaS, and GaSe1−xSx by Raman and photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2135411
Reference27 articles.
1. Difference frequency generation in a GaSe crystal with continuous tuning in the 560–1050 cm–1range
2. Efficient generation of the second harmonic of CO2laser radiation in a GaSe crystal
3. 2.8 μm laser pumped type I and type II travelling-wave optical parametric generator in GaSe
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