Diffusion current characteristics of defect-limited nBn mid-wave infrared detectors
Author:
Affiliation:
1. The Institute of Optics, University of Rochester, 275 Hutchison Rd., Rochester, New York 14627-0186, USA
2. Air Force Research Laboratory, Space Vehicles Directorate, 3550 Aberdeen Ave. SE, Kirtland AFB, New Mexico 87117, USA
Funder
Army Research Office (ARO)
Air Force Research Laboratory (AFRL)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4919450
Reference10 articles.
1. G. R. Savich , D. E. Sidor , X. Du , M. Jain , C. P. Morath , V. M. Cowen , J. K. Kim , J. F. Klem , D. Leonhardt , S. D. Hawkins , T. R. Fortune , A. Tauke-Pedretti , and G. W. Wicks , inSPIE Defense + Security(2014), pp. 907011–907016.
2. Radiation tolerance characterization of dual band InAs/GaSb type-II strain-layer superlattice pBp detectors using 63 MeV protons
3. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
4. Statistics of the Recombinations of Holes and Electrons
5. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
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