Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Advanced Research Projects Agency - Energy
National Science Foundation
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0060154
Reference42 articles.
1. GaN-Based RF Power Devices and Amplifiers
2. Optimum semiconductors for high-power electronics
3. Accurate dependence of gallium nitride thermal conductivity on dislocation density
4. Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
5. High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings
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1. Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy;APL Materials;2022-08-01
2. Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy;Physical Review Applied;2022-04-15
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