Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (n11)-Reference-Cited by-同舟云学术

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Two-dimensional ordering of (In,Ga)As quantum dots in vertical multilayers grown on GaAs(100) and (n11)

Published:2007-10-22 Issue:17 Volume:91 Page:173118
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lytvyn P. M.,Strelchuk V. V.,Kolomys O. F.,Prokopenko I. V.,Valakh M. Ya.,Mazur Yu. I.,Wang Zh. M.,Salamo G. J.,Hanke M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2802567

Reference16 articles.

1. Epitaxy of Nanostructures

2. Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots

3. Grazing incidence x-ray diffraction at free-standing nanoscale islands: fine structure of diffuse scattering

4. Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

5. Competing processes in the surface ordering of InAs islands using a subsurface island superlattice

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1. Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As2 gas flux;Applied Surface Science;2014-06

2. Scanning Probe Microscopy in Practical Diagnostic: 3D Topography Imaging and Nanometrology;Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting;2014

3. Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells;Journal of Physics D: Applied Physics;2012-12-17

4. Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (100) and (311)B substrates by self-organized anisotropic strain engineering;Journal of Crystal Growth;2010-07

5. Morphology of strained and relaxed SiGe layers grown on high-index Si substrates;Thin Solid Films;2010-02

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