On the location of ytterbium in GaP and GaAs lattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341509
Reference23 articles.
1. Rare earth activated luminescence in InP, GaP and GaAs
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1. Rare earth–doped semiconductor nanomaterials;Advanced Rare Earth-Based Ceramic Nanomaterials;2022
2. Characterization of a liquid-phase-epitaxy-grown Al0.2Ga0.8As film on a GaAs (111) substrate by RBS, channeling and PIGE analyses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
3. Characterization of InP δ-doped with Er by FFT photoreflectance;Applied Surface Science;1997-06
4. Observation of trap states in Er-doped InP by photoreflectance;Applied Physics Letters;1997-01-06
5. Rare Earth Centres in Mixed Compound Crystals;Acta Physica Polonica A;1996-07
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