On the location of ytterbium in GaP and GaAs lattices

Author:

Kozanecki A.,Gröetzschel R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Rare earth–doped semiconductor nanomaterials;Advanced Rare Earth-Based Ceramic Nanomaterials;2022

2. Characterization of a liquid-phase-epitaxy-grown Al0.2Ga0.8As film on a GaAs (111) substrate by RBS, channeling and PIGE analyses;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04

3. Characterization of InP δ-doped with Er by FFT photoreflectance;Applied Surface Science;1997-06

4. Observation of trap states in Er-doped InP by photoreflectance;Applied Physics Letters;1997-01-06

5. Rare Earth Centres in Mixed Compound Crystals;Acta Physica Polonica A;1996-07

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