Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers-Reference-Cited by-同舟云学术

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Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers

Published:2013-03-25 Issue:12 Volume:102 Page:121115
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vasil'ev P. P.,Sergeev A. B.,Smetanin I. V.,Weig T.,Schwarz U. T.,Sulmoni L.,Dorsaz J.,Lamy J.-M.,Carlin J.-F.,Grandjean N.,Zeng X.,Stadelmann T.,Grossmann S.,Hoogerwerf A. C.,Boiko D. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4798264

Reference16 articles.

1. Enormously high-peak-power optical pulse generation from a single-transverse-mode GaInN blue-violet laser diode

2. Picosecond optical pulse generation from self-pulsating bisectional GaN-based blue-violet laser diodes

3. 200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity

4. Conditions for self‐sustained pulsation and bistability in semiconductor lasers

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4. III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources;Japanese Journal of Applied Physics;2021-12-15

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