Adapted parameterization of incomplete ionization in aluminum-doped silicon and impact on numerical device simulation
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
2. Department Solar Energy, Institute Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover, Germany
Funder
Reiner Lemoine-Stiftung (Reiner Lemoine Stiftung)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4913255
Reference48 articles.
1. P. Altermatt , S. Steingrube , Y. Yang , C. Sprodowski , T. Dezhdar , S. Koc , B. Veith , S. Herrman , R. Bock , K. Bothe , J. Schmidt , and R. Brendel , presented at the Proceeding of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009, pp. 901–906.
2. Formation of aluminum–oxygen complexes in highly aluminum-doped silicon
3. Recombination lifetimes in highly aluminum-doped silicon
4. Effect of incomplete ionization for the description of highly aluminum-doped silicon
5. Metal-insulator transition in a doped semiconductor
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