Adapted parameterization of incomplete ionization in aluminum-doped silicon and impact on numerical device simulation

Author:

Steinkemper Heiko1,Rauer Michael1,Altermatt Pietro2,Heinz Friedemann D.1,Schmiga Christian1,Hermle Martin1

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany

2. Department Solar Energy, Institute Solid-State Physics, University of Hannover, Appelstrasse 2, 30167 Hannover, Germany

Funder

Reiner Lemoine-Stiftung (Reiner Lemoine Stiftung)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference48 articles.

1. P. Altermatt , S. Steingrube , Y. Yang , C. Sprodowski , T. Dezhdar , S. Koc , B. Veith , S. Herrman , R. Bock , K. Bothe , J. Schmidt , and R. Brendel , presented at the Proceeding of the 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2009, pp. 901–906.

2. Formation of aluminum–oxygen complexes in highly aluminum-doped silicon

3. Recombination lifetimes in highly aluminum-doped silicon

4. Effect of incomplete ionization for the description of highly aluminum-doped silicon

5. Metal-insulator transition in a doped semiconductor

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