Simulation of ZnSe-based self-electro-optic effect devices-Reference-Cited by-同舟云学术

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Simulation of ZnSe-based self-electro-optic effect devices

Published:1999-05-15 Issue:10 Volume:85 Page:7051-7058
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Merbach D.,Schöll E.,Gutowski J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.370511

Reference21 articles.

1. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

2. Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect

3. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

4. Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystals

5. Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rydberg magnetoexcitons in Cu2O quantum wells;Physical Review B;2021-01-19

2. (Cd,Zn)Se quantum wells;Landolt-Börnstein - Group III Condensed Matter

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