The effect of bonded interface on electrical properties of bonded silicon‐on‐insulator wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352302
Reference11 articles.
1. Measurement and modeling of circuit speed of CMOS on oxygen-implanted SOI
2. Silicon‐On‐Insulator by Wafer Bonding: A Review
3. A Model for the Silicon Wafer Bonding Process
4. Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers
5. Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment
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