Electrical characterization of InGaAs/InP quantum wells by scanning capacitance microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1625109
Reference11 articles.
1. TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY
2. Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures
3. Another dimension in device characterization
4. Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy
5. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
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