Author:
Hogg S. M.,Llewellyn D. J.,Tan H. H.,Ridgway M. C.
Subject
Physics and Astronomy (miscellaneous)
Cited by
2 articles.
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1. Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
2. Interface properties of (In,Ga)As/GaAs quantum wells grown by solid-phase epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03