Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767382
Reference8 articles.
1. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
2. Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes
3. Modeling of GaN-Based Resonant Tunneling Diodes: Influence of Polarization Fields
4. Modelling of Polarization Charge-Induced Asymmetry of I-V Characteristics of AlN/GaN-Based Resonant Tunnelling Structures
5. Ballistic transport in GaN/AlGaN resonant tunneling diodes
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1. 1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate;Applied Physics Letters;2021-10-11
2. Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes;Chinese Physics B;2016-06
3. Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode;Superlattices and Microstructures;2016-03
4. Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices;Journal of Applied Physics;2015-12-14
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