Raman characterization of focused ion beam fabricated lithium niobate film

Abstract

Lithium niobate (LiNbO3, LN) on insulator (LNOI) has emerged as a promising platform for integrated photonics, due to the strong optical confinement and excellent nonlinear optical and electrical characteristics of LN crystal. Focused ion beam (FIB) as a versatile technique has become a typical way to fabricate LNOI microstructures. However, due to the bombardment of Ga+ ions during fabrication, the LN lattice is damaged, which would deteriorate the performance of LNOI devices. Thus, the recognition of the damage formed by FIB fabrication is necessary for the control and optimization of the properties of LN microstructures. However, previous studies on this issue have not delved into it from a lattice perspective. Here, we conducted an investigation into the damage inflicted on LN film due to FIB fabrication and the subsequent impact of buffered oxide etching (BOE) treatment on this damage using Raman spectroscopy. Our findings indicate that the interaction between Ga+ ions and LN film results in lattice amorphization, as well as a reduction in the ionic bonding and lattice stress within LN. Furthermore, absorption spectra were acquired both before and after BOE treatment, revealing the emergence of additional optical losses attributed to Ga+ ions. Notably, these defects responsible for optical losses are predominantly concentrated near the surface of the milled LN film, and BOE treatment proves efficient in their removal. This study contributes to further understanding of the defect structure in LN film after FIB fabrication, as well as repairing the damage and, thus, improving the performance of LN microstructures.