Influence of nitrogen profile on electrical characteristics of furnace‐ or rapid thermally nitrided silicon dioxide films-Reference-Cited by-同舟云学术

Influence of nitrogen profile on electrical characteristics of furnace‐ or rapid thermally nitrided silicon dioxide films

Author:

Bouvet D.¹,Clivaz P. A.¹,Dutoit M.¹,Coluzza C.²,Almeida J.²,Margaritondo G.²,Pio F.³

Affiliation:

1. Institute for Micro‐ and Optoelectronics, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland

2. Institute for Applied Physics, Swiss Federal Institute of Technology, CH 1015 Lausanne, Switzerland

3. SGS‐Thomson Microelectronics, Central R&D, Agrate Brianza, Italy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference22 articles.

1. M. Dutoit, D. Bouvet, J. Mi, N. Novkovski, and P. Letourneau, Microelectron. J. 25, 539 (1994), and references therein.MICEB90026-2692

2. M. Dutoit, P. Letourneau, J. Mi, N. Novkovski, J. Manthey, and J. Solo de Zaldivar, J. Electrochem. Soc. 140, 549 (1993).JESOAN0013-4651

4. Y. Okada, P. J. Tobin, V. Lakhotia, W. A. Feil, S. A. Ajuria, and R. I. Hedge, Appl. Phys. Lett. 63, 194 (1993).APPLAB0003-6951

5. T. Arakawa, T. Hayashi, M. Ohno, R. Matsumoto, A. Uchiyama, and H. Fukuda, Proc. SSDM, Yokohama, 1994, p. 853.

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