Detecting driving potentials at the buried SiO2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy-Reference-Cited by-同舟云学术

Detecting driving potentials at the buried SiO2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy

Published:2023-07-17 Issue:3 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Horio Masafumi¹^ORCID,Sumi Toshihide¹^ORCID,Bullock James²^ORCID,Hirata Yasuyuki³,Miyamoto Masashige¹^ORCID,Nebgen Bailey R.⁴⁵^ORCID,Wada Tetsuya¹,Senoo Tomoaki¹^ORCID,Tsujikawa Yuki¹^ORCID,Kubota Yuya⁶^ORCID,Owada Shigeki⁶⁷^ORCID,Tono Kensuke⁶⁷^ORCID,Yabashi Makina⁶⁷^ORCID,Iimori Takushi¹⁸,Miyauchi Yoshihiro³,Zuerch Michael W.⁴⁵^ORCID,Matsuda Iwao¹⁸^ORCID,Schwartz Craig P.⁹^ORCID,Drisdell Walter S.¹¹⁰^ORCID

Affiliation:

1. Institute for Solid State Physics, The University of Tokyo 1 , Kashiwa, Chiba 277-8581, Japan

2. Electrical and Electronic Engineering, The University of Melbourne 2 , Victoria 3010, Australia

3. National Defense Academy of Japan 3 , Yokosuka, Kanagawa 239-8686, Japan

4. Department of Chemistry, University of California 4 , Berkeley, California 94720, USA

5. Materials Sciences Division, Lawrence Berkeley National Laboratory 5 , Berkeley, California 94720, USA

6. RIKEN 6 SPring-8 Center, 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan

7. Japan Synchrotron Radiation Research Institute (JASRI) 7 , 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan

8. Trans-scale Quantum Science Institute, the University of Tokyo 8 , Hongo, Bunkyo-ku, Tokyo 113-8654, Japan

9. Nevada Extreme Conditions Laboratory, University of Nevada 9 , Las Vegas, Las Vegas, Nevada 89154, USA

10. Chemical Sciences Division, Lawrence Berkeley National Laboratory 10 , Berkeley, California 94720, USA

Abstract

We present an approach to selectively examine an asymmetric potential in the buried layer of solar cell devices by means of nonlinear x-ray spectroscopy. Detecting second harmonic generation signals while resonant to the SiO2 core level, we directly observe existence of the band bending effect in the SiO2 nanolayer, buried in the heterostructures of Al/LiF/SiO2/Si, TiO2/SiO2/Si, and Al2O3/SiO2/Si. The results demonstrate high sensitivity of the method to the asymmetric potential that determines performance of functional materials for photovoltaics or other optoelectronic devices.

Funder

National Science Foundation

Basic Energy Sciences

Chemical Sciences, Geosciences, and Biosciences Division

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0156171/18046992/031602_1_5.0156171.pdf

Reference31 articles.

1. High-Performance TiO2-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

2. Origin of the tunable carrier selectivity of atomic-layer-deposited TiOx nanolayers in crystalline silicon solar cells

3. Full-Area Passivating Hole Contact in Silicon Solar Cells Enabled by a TiO_x/Metal Bilayer

4. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

5. Lithium Fluoride Based Electron Contacts for High Efficiency n-Type Crystalline Silicon Solar Cells

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