Time‐resolved photocurrent response of metal‐semiconductor‐metal photodetectors to double‐pulse excitation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110332
Reference13 articles.
1. Current transport in metal-semiconductor-metal (MSM) structures
2. The DSI diode—A fast large-area optoelectronic detector
3. Transit time limited response of GaAs metal‐semiconductor‐metal photodiodes
4. Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors
5. Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
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1. Impulse responses of submicron GaAs photodetectors;Solid-State Electronics;2004-12
2. Impulse response of metal-semiconductor-metal photodetector at high energy level of optical illumination;SPIE Proceedings;2000-12-15
3. Transit-time considerations in metal–semiconductor–metal photodiode under high illumination conditions;Solid-State Electronics;2000-09
4. Effects of high space-charge fields on the impulse response of the metal–semiconductor–metal photodiode;IEE Proceedings - Optoelectronics;2000-06-01
5. Monte Carlo simulator of the charge signal induced by external radiation on semi-insulating GaAs detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-09
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