Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2058221
Reference15 articles.
1. Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy
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3. Visualization of the depleted layer in nanoscaled pn junctions on Si(001) surfaces with the use of scanning tunneling microscopy
4. Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy
5. Two‐dimensional profiling of shallow junctions in Si metal‐oxide‐semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy
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1. Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor;Japanese Journal of Applied Physics;2024-08-01
2. Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy;Japanese Journal of Applied Physics;2011-04-20
3. Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy;Japanese Journal of Applied Physics;2011-04-01
4. Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy;Journal of the Vacuum Society of Japan;2011
5. Dopant and Carrier Concentration Profiling with Atomic Resolution by Scanning Tunneling Microscopy;ECS Transactions;2009-05-15
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