ThO2 on Ir Cathodes for Electron Bombarded Semiconductor Devices-Reference-Cited by-同舟云学术

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ThO2 on Ir Cathodes for Electron Bombarded Semiconductor Devices

Published:1972-08 Issue:8 Volume:43 Page:1113-1115
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Gray H. F.,Harris F. H.,Pankey T.,Haas G. A.

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1685858

Reference19 articles.

1. Electron beam switched P-N junctions

2. Vapor Pressure of Thorium Oxide from 2050 to 2250°K.1,2

3. The Reaction Occurring on Thoriated Cathodes1

4. Evaporation and Diffusion Phenomena in Thoria Coated Cathodes†

5. Spectral Emissivity and Electron Emission Constants of Thoria Cathodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermionic Emitters;Experimental Innovations in Surface Science;2015

2. Thoriated Thermionic Emitters;Experimental Innovations in Surface Science;1997

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