The possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers-Reference-Cited by-同舟云学术

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The possibility of difference frequency generation in the GaAs phonon reststrahlen band within dual-chip GaAs-based lasers

Published:2020-08-07 Issue:5 Volume:128 Page:053104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dubinov A. A.¹²^ORCID,Utochkin V. V.¹

Affiliation:

1. Institute for Physics of Microstructures RAS, 603950 Nizhny Novgorod, Russia

2. Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia

Funder

Ministry of Education and Science of the Russian Federation

Foundation for the Advancement of Theoretical Physics and Mathematics

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010583

Reference28 articles.

1. Terahertz gas-phase spectroscopy: chemometrics for security and medical applications

2. Markets, Availability, Notice, and Technical Performance of Terahertz Systems: Historic Development, Present, and Trends

3. The 2017 terahertz science and technology roadmap

4. Quantum cascade lasers: 20 years of challenges

5. Far-Infrared Quantum Cascade Lasers Operating in the AlAs Phonon Reststrahlen Band

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Possibility of intracavity terahertz difference frequency generation in a two-frequency GaAsP/AlGaAs/GaAs quantum well laser;Applied Optics;2021-05-17

2. InP-based waveguide frequency doubler for subterahertz-range radiation sources;Optical Engineering;2021-01-19

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