Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces-Reference-Cited by-同舟云学术

Coherent phonon spectroscopy characterization of electronic bands at buried semiconductor heterointerfaces

Published:2016-02 Issue:5 Volume:108 Page:051607
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ishioka Kunie¹^ORCID,Brixius Kristina²^ORCID,Beyer Andreas²,Rustagi Avinash³,Stanton Christopher J.³,Stolz Wolfgang²,Volz Kerstin²,Höfer Ulrich²,Petek Hrvoje⁴

Affiliation:

1. Nano Characterization Unit, National Institute for Materials Science, Tsukuba 305-0047, Japan

2. Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, 35032 Marburg, Germany

3. Department of Physics, University of Florida, Gainesville, Florida 32611, USA

4. Department of Physics and Astronomy and Pittsburgh Quantum Institute, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA

Funder

Division of Materials Research (DMR)

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4941397

Reference25 articles.

1. Heterostructure devices: A device physicist looks at interfaces

2. On the adjustability of the “abrupt” heterojunction band-gap discontinuity

3. Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces

4. Fermi level pinning at epitaxial Si on GaAs(100) interfaces

5. Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

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