Advancing thermoelectrics by vacancy engineering and band manipulation in Sb-doped SnTe

Advancing thermoelectrics by vacancy engineering and band manipulation in Sb-doped SnTe–CdTe alloys

Published:2021-10-25 Issue:17 Volume:119 Page:172101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Fujie¹,He Shan¹,Li Ruiheng¹,Lin Liwei¹,Ren Ding¹,Liu Bo¹,Ang Ran¹²^ORCID

Affiliation:

1. Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China

2. Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China

Funder

National Key Research and Development Program of China

Joint Funds of the National Natural Science Foundationof China and the Chinese Academy of Sciences' Large-Scale Scientific Facility

National Natural Science Foundation of China

Nuclear Power Technology Innovation Center of China

Sichuan University Innovation Research Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0070581

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