Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

Published:2009-04-06 Issue:14 Volume:94 Page:143103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Hao,Yuan Jiayue,Rieger Torsten,van Veldhoven Peter J.,Nouwens Peter,Eijkemans Tom J.,de Vries Tjibbe,Smalbrugge Barry,Geluk Erik Jan,Nötzel Richard

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3116146

Reference13 articles.

1. InAs/InP Self-Assembled Quantum Dots: Wavelength Tuning and Optical Nonlinearities

2. Butt joint integrated extended cavity InAs/InP (100) quantum dot laser emitting around 1.55 [micro sign]m

3. Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth

4. Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane

5. Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots

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