Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
Author:
Affiliation:
1. The Hong Kong University of Science and Technology Shenzhen Research Institute, Shenzhen 518000, China
2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China
Funder
Shenzhen Science and Technology Innovation Committee
Hong Kong Research Impact Fund
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048068
Reference26 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology
3. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
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