Electrical characteristics of directly‐bonded GaAs and InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108855
Reference11 articles.
1. Growth of GaAs on Si by MOVCD
2. Gallium arsenide and other compound semiconductors on silicon
3. Low‐threshold (∼600 A/cm2at room temperature) GaAs/AlGaAs lasers on Si (100)
4. First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate
5. Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate
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