THE FIELD‐EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n‐n HETEROJUNCTIONS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1723579
Reference4 articles.
1. See, for example, Proc. Second Conf. Semicond. Surfaces, J. Phys. Chem. Solids 14 (1960).
2. Experiments on Ge-GaAs heterojunctions
3. Experiments on Ge-GaAs heterojunctions
4. Effective Carrier Mobility in Surface-Space Charge Layers
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1. Transport properties and applications of unstrained In0.75Ga0.25As/Al0.6Ga0.4As heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-07
2. HISTORY AND PERSPECTIVE OF SEMICONDUCTOR SUPERLATTICES;Synthetic Modulated Structures;1985
3. ADVANCES IN SEMICONDUCTOR SUPERLATTICES, QUANTUM WELLS AND HETEROSTRUCTURES;Le Journal de Physique Colloques;1984-04
4. Semiconductors at IBM: Physics, Novel Devices, and Materials Science;IBM Journal of Research and Development;1981-09
5. Bibliography;Heterojunctions and Metal Semiconductor Junctions;1972
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