In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret-Reference-Cited by-同舟云学术

In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret

Published:2015-08-10 Issue:6 Volume:107 Page:063301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lu Guanghao¹²³^ORCID,Koch Norbert¹,Neher Dieter²

Affiliation:

1. Institut für Physik, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany

2. Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam, Germany

3. Frontier Institute of Science and Technology and State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Yanxiang Road 99, 710054 Xi'an, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Alexander von Humboldt-Stiftung (Alexander von Humboldt Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928554

Reference24 articles.

1. Reliability of Organic Field-Effect Transistors

2. High-performance solution-processed polymer ferroelectric field-effect transistors

3. Multibit Storage of Organic Thin-Film Field-Effect Transistors

4. 23 bits optical sensor based on nonvolatile organic memory transistor

5. High performance, foldable, organic memories based on ultra-low voltage, thin film transistors

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