Electric field induced effects at the Si–SiO2interface: Theory and experiment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332750
Reference11 articles.
1. Fully macroscopic description of bounded semiconductors with an application to the Si-SiO2interface
2. Fully macroscopic description of electrical conduction in metal-insulator-semiconductor structures
3. Electronic states at the silicon-silicon dioxide interface
4. Theory of the electronic structure of the Si-SiO2interface
5. A model of interface states and charges at the Si‐SiO2interface: Its predictions and comparison with experiments
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral distribution of hot-carrier-induced interface traps in MOSFETs;IEEE Transactions on Electron Devices;1988
2. Coupled evolution equations of deformable semiconductors;International Journal of Engineering Science;1987-01
3. Low-temperature operation of silicon surface-channel charge-coupled devices;IEEE Transactions on Electron Devices;1987-01
4. Effects of varying the processing parameters on the interface-state density and retention characteristics of an MNOS capacitor;Solid-State Electronics;1986-06
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