High‐resolution transmission electron microscopic study of the γ‐FeSi2/Si(111) interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111748
Reference21 articles.
1. Transistor action in Si/CoSi2/Si heterostructures
2. Study of ballistic transport in Si‐CoSi2‐Si metal base transistors
3. Epitaxial silicides with the fluorite structure
4. Evidence for seven-fold cobalt coordination at the CoSi2/Si(111) interface
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1. Perpendicular Magnetic Anisotropy of Iron–Cobalt Silicide Nanowires on Si(110);Japanese Journal of Applied Physics;2010-07-20
2. Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation;Applied Surface Science;2008-05
3. ATOMIC STRUCTURE ANALYSIS OF ULTRA THIN IRON SILICIDE FILMS BY STEREO ATOMSCOPE;Surface Review and Letters;2006-04
4. Structure of Iron Silicide film on Si(111) Grown by Solid-Phase Epitaxy and Reactive Deposition Epitaxy;Japanese Journal of Applied Physics;2006-03-27
5. Homogeneous surface iron silicide formation on Si(111): Thec(8×4)phase;Physical Review B;2003-09-08
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