Growth-temperature optimization for low-carrier-density In0.75Ga0.25As-based high electron mobility transistors on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2798873
Reference21 articles.
1. Electronic analog of the electro‐optic modulator
2. Application of split-gate structures as tunable spin filters
3. Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions
4. Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions
5. Direct determination of the Andreev reflection probability by means of point contact spectroscopy
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3. Suspended two-dimensional electron gases in In0.75Ga0.25As quantum wells;Applied Physics Letters;2020-06-08
4. High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice;Journal of Physics: Condensed Matter;2018-02-16
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