Temperature dependence of avalanche breakdown voltage in Si p‐n junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.322999
Reference2 articles.
1. TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
2. AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADEDp‐nJUNCTIONS IN Ge, Si, GaAs, AND GaP
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